| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SC5161 |
ROHM |
N/a |
1200 |
 |
High breakdown voltage.VCEO = 400V NPN silicon transistor |
2SC5161 , High breakdown voltage.VCEO = 400V NPN silicon transistor
2SC5161 TL B , High voltage switching transistor (400V, 2A)
2SC5161-TL-B , High voltage switching transistor (400V, 2A)
2SC5171 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS (Tc=25°C) Weight : 1.7g(Typ.)CHARACTERISTIC SYMBOL TEST CONDITION UNITCo ..
2SC5171. ,TRANSISTOR SILICON NPN EPITAXIAL TYPE POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONSAPPLICATIONS1010.3¢3.2:0.22.7i0.20 High Transition Frequency : fT=200MHz (Typ.)O Complementary to 2 ..
2SK3940 ,Power MOSFET (N-ch single 60V<VDSS≤150V)Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage V 75 V ..
2SK3947 ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage V 600 V ..
2SK3973G ,Silicon N-channel MOS FETAbsolute Maximum Ratings T = 25°CaParameter Symbol Rating Unit Marking Symbol: 5VDrain-source sur ..
