Partno |
Mfg |
Dc |
Qty |
Available | Descript |
2SC5086FT-Y |
TOSHIBA|TOSHIBA |
N/a |
14700 |
|
VHF~UHF Band Low Noise Amplifier Applications |
2SC5086-O TOSHIBA
2SC5086-O(TE85L) TOSHIBA
2SC5086-Y TOSHIBA, VHF~UHF Band Low Noise Amplifier Applications
2SC5086-Y TOS, VHF~UHF Band Low Noise Amplifier Applications
2SC5086-Y T5L,F,T TOSHIBA
2SC5086-Y TE85L TOSHIBA
2SC5086-Y(T5LMDNS) TOS
2SC5086-Y/O TOSHIBA
2SC5087-0 TOSHIBA
2SC5087-O TOSHIBA
2SC5087R(TE85L,F) TOSHIBA
2SC5087R/TE85LF TOSHIBA
2SC5087-Y TOSHIBA
2SC5087-Y(TE85L) toshiba
2SC5086FT-Y , VHF~UHF Band Low Noise Amplifier Applications
2SC5088 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsApplications Unit: mm Low noise figure, high gain. 2 NF = 1.1dB, |S | = 13dB (f = 1 GHz) 21e ..
2SC5089 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsApplications Unit: mm Low noise figure, high gain. 2 NF = 1.1dB, |S | = 13dB (f = 1 GHz) 21e ..
2SC5090 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsApplications Unit: mm Low noise figure, high gain. 2 NF = 1.1dB, |S | = 13dB (f = 1 GHz) 21e ..
2SC5092 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsApplications Unit: mm Low noise figure, high gain. 2 NF = 1.8dB, |S | = 9.5dB (f = 2 GHz) 21 ..
2SK3756 ,Radio-frequency power MOSFETElectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. MaxUnitOutput ..
2SK3757 ,Power MOSFET (N-ch 250V<VDSS≤500V)Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage V 450 V ..
2SK3761 ,MOSFET 2SK/2SJ SeriesApplications 4.7 max4.7 max 10.5 max 10.5 max 3.84 0.2 1.3 3.84 0.2 1.3 • Low drain-source ON r ..