2SC5029 ,Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching ApplicationsAPPLICATIONS Unit 1n mmLow Saturation Voltage'' A '-Nt fnhM: v CE (sat) = U.0 v (max)0 High Collect ..
2SC5034 ,Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)Absolute Maximum Ratings (T =25˚C)nC0.75– 0.1Parameter Symbol Ratings UnitCollector to base voltag ..
2SC5034 ,Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)Featuresnf 3.2– 0.1l High collector to emitter VCEOl High-speed switching––l Full-pack package with ..
2SC5039 , 2SC5039
2SC5044 ,Ultrahigh-Definition CRT Display Horizontal Deflection Output ApplicationsOrdering number: EN 4782A2805044NPN Triple Diffused Planar Silicon TransistorUltrahigh-Definition C ..
2SC5044 ,Ultrahigh-Definition CRT Display Horizontal Deflection Output ApplicationsAbsolute Maximum Ratings at, Ta = 25°C unitCollector-to-Base Voltage VCBO 1600 VCollector-to-Emi; V ..
2SK3667 ,MOSFET 2SK/2SJ SeriesThermal Characteristics 2 Characteristics Symbol Max Unit Thermal resistance, channel to case R 2.7 ..
2SK3669 ,Field Effect Transistor Silicon N Channel MOS Type (PI-MOS VII) Switching Regulators, for Audio Amplifier and Motor Drive ApplicationsApplications Low drain-source ON resistance: R = 95 mΩ (typ.) DS (ON) High forward transfe ..
2SK3669 ,Field Effect Transistor Silicon N Channel MOS Type (PI-MOS VII) Switching Regulators, for Audio Amplifier and Motor Drive ApplicationsThermal Characteristics Characteristics Symbol MaxUnit Thermal resistance, channel to case R 6.25 ° ..
2SK3670 ,Power MOSFET (N-ch single 60V<VDSS≤150V)Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage V 150 ..
2SK3670 ,Power MOSFET (N-ch single 60V<VDSS≤150V)Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. MaxUnitGate l ..
2SK3673-01MR , N-CHANNEL SILICON POWER MOSFET
2SC5029
Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications
TOSHIBA 2SC5029
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
2SC5029
POWER AMPLIFIER APPLICATIONS
POWER SWITCHING APPLICATIONS
0 Low Saturation Voltage
.' VCE (sat)=0.5V (Max.)
0 High Collector Power Dissipation : Pc=1.3W (Ta=25°C)
0 High Speed Switching : tstg=1.0,as (Typ.)
0 Complementary to 2SA1892
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 50 V
Collector-Emitter Voltage VCEO 50 V It - g
Emitter-Base Voltage VEBO 5 V _E
Collector Current IC 3 A so Cl 1. EMITTER
Base Current IB 0.2 A 2. COLLECTOR
Collector Power Dissipation PC 1.3 W 3. BASE
Junction Temperature Ti 150 "C JEDEC -
Storage Temperature Range Tstg -55--150 "C JEITA -
TOSHIBA 2-8M1A
ELECTRICAL CHARACTERISTICS (Ta =25°C) Weight : 0.55g (Typ.)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=5OV, IE=0 - - 1.0 pA
Emitter Cut-off Current IEBO VEB=5V, Ic=0 - - 1.0 PA
Collector-Emi; Breakdown - -
Voltage V (BR) CEO IC - lOmA, 1B - O 50 - - V
. hFE (1) (Note) VCE=2V, Ic=0.5A 70 - 240
DC Current Gain hFE (2) var-- 2V, 10: 1.5 A 40 - -
Saturation Collector-Emitter VCE (sat) IC=IA, IB=0.05A - - 0.5 V
Voltage Base-Emitter VBE (sat) IC = IA, 1B = 0.05A - - 1.2
Transition Frequency fT VCE=2V, Ic=0.5A - 100 - MHz
Collector Output Capacitance Cob VCB = 10V, IE =0, f = 1MHz - 30 - pF
Turn-on Time ton 2flts IBl OUTPUT - 0.1 -
Switching . IBI INPUT - C}
Time Storage Time tstg 1B2 1B2 [',i, - 1.0 - ,us
. 1B1 = -1B2 = 0.05A, - -
Fall Time tf DUTY CYCLES 1% 30V 0.1
(Note) '. hFE(1)Classification 0 : 70--140, Y .' 120--240
1 2001-11-05
TOSHIBA 2SC5029
IC - VCE hFE - IC
COMMON EMITTER COMMON EMITTER
A Ta=25°C _
5 15 500 VCE_2V
S? 12 = 300
E E Ta=IOOC
t',f,t 10 c,
D 8 z 100
ttt td
O 6 n:
O o 50
ii, © 30
O IB=2mA
0 2 4 6 8 10 12 14 0.01 0.03 0.1 0.3 1
C0LLECT0R-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)
VCE(sat) - IC VBE(sat) - IC
COMMON EMITTER
IC / IB = 20
COMMON EMITTER
IC / IB = 20
Ta = 100°C
VOLTAGE VCE (sat) (V)
COLLECTOR-EMITTER SATURATION
BASE-EMITTER SATURATION VOLTAGE
VBE (sat) (V)
0.02 .
0.01 0.03 0.1 0.3 1 0.01 0.03 0.1 0.3 1
COLLECTOR CURRENT IC (A) COLLECTOR CURRENT IC (A)
IC - VBE
I I COMMON EMITTER
g" I I VCE=2V
S? 1.5
E Ta=100°Cl 25 -55
0.5 III
0 0.4 0.8 1.2 1.6 2.0
BASE-EMITTER VOLTAGE VBE (V)
2 2001-11-05
TOSHIBA 2SC5029
rth - tw
CURVES SHOULD BE APPLIED IN THERMAL LIMITED AREA.
(SINGLE NONREPETITIVE PULSE) Ta=25°C
TRANSIENT THERMAL RESISTANCE
rth (°C/W)
0.001 0.01 0.1 1 10 100 1000
PULSE WIDTH tw (s)
SAFE OPERATING AREA PC - Ta
IC MAX.(PULSED) X
lo MAX. (CONTINOUS)
100ms)k.
PC (W)
0.5 DC OPERATION
0 3 Ta = 25''C
COLLECTOR POWER DISSIPATION
COLLECTOR CURRENT 1C (A)
25 50 75 100 125 150 175
yd. SINGLE NONREPETITIVE 0
PULSE Ta=25°C
0.05 CURVES MUST BE DERATED
LINEARLY WITH INCREASE
0 02 IN TEMPERATURE. VCEO MAX.
0.3 1 3 10 30 100
AMBIENT TEMPERATURE Ta CC)
C0LLEcT0R-EMITTER VOLTAGE VCE (V)
3 2001-11-05
TOSHIBA 2SC5029
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
4 2001-11-05
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