Partno |
Mfg |
Dc |
Qty |
Available | Descript |
2SC5012-T1/R37 |
NEC|NEC |
N/a |
700 |
|
|
2SC5013 ,HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLDXYZDATA SHEETSILICON TRANSISTOR2SC5013HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIA ..
2SC5013-T1 ,HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLDXYZDATA SHEETSILICON TRANSISTOR2SC5013HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIA ..
2SC5014-T1 ,HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLDDATA SHEETSILICON TRANSISTOR2SC5014HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL ..
2SC5015 ,HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLDT83DATA SHEETSILICON TRANSISTOR2SC5015HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIA ..
2SC5015-T1 ,HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLDT83DATA SHEETSILICON TRANSISTOR2SC5015HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIA ..
2SK3636 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitDrain-source ..
2SK3637 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitGate-drain s ..
2SK3638 ,SWITCHING N-CHANNEL POWER MOSFETfeatures a low PART NUMBER PACKAGE on-state resistance and excellent switching characteristics, an ..