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2SC4955NECN/a3000avaiHIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
2SC4955-T1 |2SC4955T1NECN/a1450avaiHIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD


2SC4955 ,HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLDDATA SHEETSILICON TRANSISTOR2SC4955HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL ..
2SC4955-T1 ,HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLDDATA SHEETSILICON TRANSISTOR2SC4955HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL ..
2SC4957 ,HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLDDATA SHEETSILICON TRANSISTOR2SC4957HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL ..
2SC4958-T1 ,HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLDFEATURESPACKAGE DIMENSIONS• Low Noise, High Gainin millimeters• Low Voltage Operation2.1 ± 0.1• Low ..
2SC4959 ,HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLDFEATURESPACKAGE DIMENSIONS• Low Noise, High Gainin millimeters• Low Voltage Operation2.1 ± 0.1• Low ..
2SC4959-T1 ,HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLDELECTRICAL CHARACTERISTICS (TA = 25 °C)CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONColl ..
2SK3568.. ,Power MOSFET (N-ch 250V<VDSS≤500V)absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semi ..
2SK3569 ,MOSFET 2SK/2SJ SeriesThermal Characteristics Characteristics Symbol Max Unit 2 Thermal resistance, channel to case R 2.7 ..
2SK3569. ,MOSFET 2SK/2SJ SeriesApplications Unit: mm • Low drain-source ON resistance: R = 0.54 (typ.) DS (ON)• High forward tr ..
2SK357 , HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS
2SK357 , HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS
2SK357. , HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS


2SC4955-2SC4955-T1

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