Partno |
Mfg |
Dc |
Qty |
Available | Descript |
2SC4944-G |
TOSHIBA|TOSHIBA |
N/a |
6000 |
|
|
2SC4954 ,HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLDDATA SHEETSILICON TRANSISTOR2SC4954HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL T ..
2SC4955 ,HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLDDATA SHEETSILICON TRANSISTOR2SC4955HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL ..
2SC4955-T1 ,HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLDDATA SHEETSILICON TRANSISTOR2SC4955HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL ..
2SC4957 ,HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLDDATA SHEETSILICON TRANSISTOR2SC4957HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL ..
2SC4958-T1 ,HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLDFEATURESPACKAGE DIMENSIONS• Low Noise, High Gainin millimeters• Low Voltage Operation2.1 ± 0.1• Low ..
2SK3567 ,MOSFET 2SK/2SJ SeriesTENTATIVE 2SK3567 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3567 un ..
2SK3567.. ,MOSFET 2SK/2SJ SeriesThermal Characteristics 2 Characteristics Symbol Max Unit Thermal resistance, channel to case R 3.5 ..
2SK3568 ,Power MOSFET (N-ch 250V<VDSS≤500V)Thermal Characteristics 2Characteristics Symbol Max UnitThermal resistance, channel to case R 3.125 ..