2SC4942 ,High-speed high-voltage switching NPN 3-diffusion transFEATURES• New package with dimensions in between those of smallsignal and power signal package Hig ..
2SC4944 ,Transistor Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplefier ApplicationsApplications Unit: mm Small package (dual type) High voltage and high current: V = 50 V, I ..
2SC4954 ,HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLDDATA SHEETSILICON TRANSISTOR2SC4954HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL T ..
2SC4955 ,HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLDDATA SHEETSILICON TRANSISTOR2SC4955HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL ..
2SC4955-T1 ,HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLDDATA SHEETSILICON TRANSISTOR2SC4955HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL ..
2SC4957 ,HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLDDATA SHEETSILICON TRANSISTOR2SC4957HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL ..
2SK3565 ,MOSFET 2SK/2SJ SeriesThermal Characteristics 2Characteristics Symbol Max Unit Thermal resistance, channel to case R 2.78 ..
2SK3566 ,MOSFET 2SK/2SJ SeriesThermal Characteristics Characteristics Symbol Max Unit 2Thermal resistance, channel to case R 3.12 ..
2SK3567 ,MOSFET 2SK/2SJ SeriesTENTATIVE 2SK3567 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ď€-MOSVI) 2SK3567 un ..
2SK3567.. ,MOSFET 2SK/2SJ SeriesThermal Characteristics 2 Characteristics Symbol Max Unit Thermal resistance, channel to case R 3.5 ..
2SK3568 ,Power MOSFET (N-ch 250V<VDSS≤500V)Thermal Characteristics 2Characteristics Symbol Max UnitThermal resistance, channel to case R 3.125 ..
2SK3568.. ,Power MOSFET (N-ch 250V<VDSS≤500V)absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semi ..
2SC4942
