| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SC4934-E |
HITACHI |
N/a |
2030 |
 |
Silicon NPN Epitaxial |
2SC4935 TOSHIBA,applications (computer, personal equipment, office equipment, measuring equipment, industrialrobotics, domestic appliances, etc.). These TOSHIBA prod ..
2SC4934-E , Silicon NPN Epitaxial
2SC4935 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) . POWER AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-off Cu ..
2SC4942 ,High-speed high-voltage switching NPN 3-diffusion transFEATURES• New package with dimensions in between those of smallsignal and power signal package Hig ..
2SC4944 ,Transistor Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplefier ApplicationsApplications Unit: mm Small package (dual type) High voltage and high current: V = 50 V, I ..
2SC4954 ,HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLDDATA SHEETSILICON TRANSISTOR2SC4954HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL T ..
2SK3562 ,MOSFET 2SK/2SJ SeriesThermal Characteristics Characteristics Symbol Max Unit2 Thermal resistance, channel to case R 3.12 ..
2SK3563 ,MOSFET 2SK/2SJ SeriesThermal Characteristics Characteristics Symbol Max Unit 2Thermal resistance, channel to case R 3.57 ..
2SK3563.. ,MOSFET 2SK/2SJ SeriesApplications 10±0.3 2.7±0.2 φ3.2±0.2• Low drain-source ON resistance: R = 1.35Ω (typ.) DS (ON)• Hi ..
