Partno |
Mfg |
Dc |
Qty |
Available | Descript |
2SC4807ERTR |
HITACHI |
N/a |
1000 |
|
|
2SC4808 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC4810 ,Silicon power transistorDATA SHEETDARLINGTON POWER TRANSISTOR2SC4810NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CO ..
2SC4813 ,Silicon power transistorDATA SHEETSILICON POWER TRANSISTOR2SC4813NPN SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWI ..
2SC4815 ,Silicon power transistorfeatures low VCE(sat) and high hFE.This transistor is ideal for use as a driver in DC/DC converters ..
2SC4821 ,NPN Epitaxial Planar Silicon Transistor High-Definition CRT Display Video Output Driver ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SK3483 ,SWITCHING N-CHANNEL POWER MOSFETELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX.UNITZer ..
2SK3484 ,SWITCHING N-CHANNEL POWER MOSFETELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX.UNITZer ..
2SK3486 ,Medium Output MOSFETsAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage ..