2SC4805 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC4805 ,Small-signal deviceAbsolute Maximum Ratings T = 25°Ca10˚Parameter Symbol Rating UnitCollector-base voltage (Emitter o ..
2SC4805G ,Silicon NPN epitaxial planar typeAbsolute Maximum Ratings T = 25°CaParameter Symbol Rating UnitCollector-base voltage (Emitter open ..
2SC4808 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC4810 ,Silicon power transistorDATA SHEETDARLINGTON POWER TRANSISTOR2SC4810NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CO ..
2SC4813 ,Silicon power transistorDATA SHEETSILICON POWER TRANSISTOR2SC4813NPN SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWI ..
2sk3476 ,Field Effect Transistor Silicon N Channel MOS Type VHF- and UHF-band Amplifier ApplicationsApplications Unit: mm Output power: P = 7.0 W (min) O Gain: G = 11.4dB (min) P Drain e ..
2SK3479 ,SWITCHING N-CHANNEL POWER MOSFETELECTRICAL CHARACTERISTICS (TA = 25°C)CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITZer ..
2SK3480 ,SWITCHING N-CHANNEL POWER MOSFETELECTRICAL CHARACTERISTICS (TA = 25°C)CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITZer ..
2SK3481 ,SWITCHING N-CHANNEL POWER MOS FETELECTRICAL CHARACTERISTICS (TA = 25°C)CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITZer ..
2SK3482 ,SWITCHING N-CHANNEL POWER MOSFETELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX.UNITZer ..
2SK3483 ,SWITCHING N-CHANNEL POWER MOSFETELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX.UNITZer ..
2SC4805
