| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SC4702 |
RENESAS |
N/a |
36000 |
 |
High breakdown voltage VCEO = 300 V Small Cob Cob = 1.5 pF Typ. |
2SC4702XV HITACHI
2SC4702XVTL RENESAS
2SC4702XVTR RENESAS
2SC4702 , High breakdown voltage VCEO = 300 V Small Cob Cob = 1.5 pF Typ.
2SC4703 ,MICROWAVE LOW NOISE, LOW DISTORTION AMPLIFIER NPN SILICON EPITAXIAL TRANSISTORDATA SHEETSILICON TRANSISTOR2SC4703MICROWAVE LOW NOISE, LOW DISTORTION AMPLIFIERNPN SILICON ..
2SC4703-T1 , NPN EPITAXIAL SILICON RF TRANSISTOR FOR
2SC4710 ,High-Voltage Amp, High-Voltage Switching ApplicationsFeatures. High breakdown voltage (VCEO min= 2100V).. Small Cob (typical Cob =1.3pF).. Wide ASO.. Hi ..
2SC4710 ,High-Voltage Amp, High-Voltage Switching ApplicationsAbsolute Maximum Ratings at Ta = 25°C unitCollector-to-Base Voltage VCBO 2100 VCollector-to-Emi; Vo ..
2SK3378ENTL-E , Silicon N Channel MOS FET High Speed Switching
2SK3385 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
2SK3387 ,Field Effect Transistor Silicon N Channel MOS Type (L2-pi-MOSV) Switching Regulator, DC-DC Converter and Motor Drive ApplicationsThermal Characteristics Notice: Characteristics Symbol Max UnitPlease use the S1 pin for gate input ..
