2SC4666 ,Transistor Silicon NPN Epitaxial Type (PCT process)Applications High h : h = 600~3600 FE FE High voltage: V = 50 V CEO High collector curren ..
2SC4669 , Switching Power Transistor(10A NPN)
2SC4669 , Switching Power Transistor(10A NPN)
2SC4670 ,TransistorMaintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.pl ..
2SC4672-P , NPN Plastic-Encapsulate Transistors
2SC4673 ,NPN Epitaxial Planar Silicon Transistor UHF Low-Noise Amplifier, Wide-Band Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SK3335 ,Medium Output MOSFETsAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage ..
2SK3335 ,Medium Output MOSFETsFeatures Package Dimensions•Low ON-resistance.unit : mm•4V drive.2083B[2SK3335]6.52.35.00.540.850.7 ..
2SK3338-01 ,N-CHANNEL SILICON POWER MOS-FETApplications Switching regulators UPS (Uninterruptible Power Supply) DC-DC convertersMaxim ..
2SK3342 ,Field Effect Transistor Silicon N Channel MOS Type (PI-MOSV) Switching Regulator Applications DC .DC Converter, and Motor Drive ApplicationsApplications Low drain−source ON resistance : R = 0.8 Ω (typ.) DS (ON)High forward transfer ..
2SK3348 , Silicon N Channel MOS FET High Speed Switching
2SK3353 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEFEATURES2SK3353-Z TO-220SMD• Super low on-state resistance:★ RDS(on)1 = 9.5 mΩ MAX. (VGS = 10 V, ID ..
2SC4666
Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4666 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4666 Audio Frequency Amplifier Applications
Switching Applications High hFE: hFE = 600~3600 High voltage: VCEO = 50 V High collector current: IC = 150 mA (max) Small package
Maximum Ratings (Ta ��� � 25°C)
Electrical Characteristics (Ta ��� � 25°C) VCE � 6 V, IC � 0.1 mA, f � 1 kHz,
Rg � 10 k�
Note: hFE classification A: 600~1800, B: 1200~3600
Marking Unit: mm
Weight: 0.006 g (typ.)
