| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SC4538 |
FUJI |
N/a |
250 |
 |
Silicon NPN Power Transistors |
2SC4538 , Silicon NPN Power Transistors
2SC4539 ,Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching ApplicationsApplications Low saturation voltage: V = 0.5 V (max) (I = 700 mA) CE (sat) C High speed sw ..
2SC4540 ,Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching ApplicationsApplications Low saturation voltage: V = 0.5 V (max) (I = 500 mA) CE (sat) C High speed swi ..
2SC4541 ,Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications2SC4541 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4541 Power Amplifier
2SC4541 ,Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching ApplicationsApplications Low saturation voltage: V = 0.5 V (max) (I = 1.5 A) CE (sat) C High speed swi ..
2SK3074 ,FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE RF POWER MOSFET FOR VHF .AND UHF-BAND POWER AMPLIFIER2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3074 RF POWER MOSFET FOR VH ..
2SK3078 ,FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 900 MHz BAND AMPLIFIER APPLICATIONS (GSM)APPLICATIONS (GSM) Unit: mm Output Power : P = 27.0 dBmW (Min.) OGain : G = 12.5 dB (Min.) P ..
2SK3078A ,Field Effect Transistor Silicon N Channel MOS Type VHF/UHF Band Amplifier ApplicationsApplications Unit: mm Output power: P ≥ 28.0dBmW o Gain: G ≥ 8.0dB p Drain Efficiency: ηD ..
