| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SC4357 |
MITSUBISHI |
N/a |
56100 |
 |
FOR HIGH CURRENT DRIVE AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE |
2SC4357-111-1E ISAHAYA
2SC4357-T11-1E MITSUBISHI
2SC4357-T11-1E ISAHAYA
2SC4357-T113-1D MITSUBIS
2SC4360-TA SANYO
2SC4357 , FOR HIGH CURRENT DRIVE AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
2SC4361 , PNP/NPN Epitaxial Planar Silicon Transistors
2SC4363 ,Switching ApplicationsOrdering number: EN 2809Applications. Switching circuit, inverter circuit, interface circuit, drive ..
2SC4365 ,NPN Epitaxial Planar Silicon Transistor VHF, UHF/MIX. OSC. Low-Voltage High-Frequency Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC4368 , isc Silicon NPN Power Transistor
2SK2927 , Silicon N Channel MOS FET High Speed Power Switching
2SK2927 , Silicon N Channel MOS FET High Speed Power Switching
2SK2933 , Silicon N Channel MOS FET High Speed Power Switching
