2SC4081RT1 ,General Purpose Amplifier TransistorMaximum Ratings may damage the device. MaximumRatings are stress ratings only. Functional operation ..
2SC4081T106R , General purpose transistor (50V, 0.15A)
2SC4081-T106R , General purpose transistor (50V, 0.15A)
2SC4081T106S , General purpose transistor (50V, 0.15A)
2SC4081UB , General purpose small signal amplifier (50V, 0.15A)
2SC4093 ,MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLDDATA SHEETDATA SHEETSILICON TRANSISTOR2SC4093MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITA ..
2SK2409 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEapplications. 2.54 2.541. Gate2. DrainABSOLUTE MAXIMUM RATINGS (Ta = 25 ˚C)3. SourceDrain to Sou ..
2SK2410 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEapplications.1. Gate2. DrainABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)3. SourceDrain to Source Vol ..
2SK2410. ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEFEATURES2.7 ±0.2• Low On-ResistanceRDS(on)1 = 40 mΩ MAX. (@ VGS = 10 V, ID = 15 A)RDS(on)2 = 60 mΩ ..
2SK2412 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEapplications.1. Gate2. Drain3. SourceABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)Drain to Source Vol ..
2SK2413 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEapplications.1. Gate2. Drain3. SourceABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)Drain to Source Vol ..
2SK2414 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEapplications.2.3 ±0.26.5 ±0.25.0 ±0.20.5 ±0.1
2SC4081RT1
General Purpose Amplifier Transistor
2SC4081RT1
General Purpose
Amplifier Transistor
NPN Surface Mount
Features Moisture Sensitivity Level: 1 Pb−Free Package is Available
MAXIMUM RATINGS (TA = 25°C)
THERMAL CHARACTERISTICSStresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Pulse Test: Pulse Width ≤ 300 �s, D.C. ≤ 2%.
