| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SC3828 |
TOSHIBA|TOSHIBA |
N/a |
177000 |
 |
|
2SC3829 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC383 ,NPN EPITAXIAL PLANAR TYPE (TV FINAL PICTURE IF AMPLIFIER APPLICATIONS)
2SC3831 , Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)
2SC3833 , Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)
2SC3838 , High-Frequency Amplifier Transistor(11V, 50mA, 3.2GHz)
2SK2003-01MR ,N-channel MOS-FETApplications----> Maximum Ratings and Characteristics > Equivalent Circuit-Absolute Maximum Ratings ..
2SK2003-01MR ,N-channel MOS-FET 2SK2003-01MRFAP-IIA Series600V 2,4Ω 40W>
2SK2003-01MR ,N-channel MOS-FETFeatures > Outline Drawing------VGS-Avalanche Proof>
