| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SC380-Y |
TOSHIBA|TOSHIBA |
N/a |
10100 |
 |
|
| 2SC380-Y |
TOS|TOSHIBA |
N/a |
125 |
|
|
2SC3810 ,NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USEELECTRICAL CHARACTERISTICS (TA = 25 ° ° °C)° °PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITC ..
2SC3811 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC3820 ,High-hFE, AF Amp ApplicationsAbsolute Maximum Ratings at Ta = 25''C unitCollector to Base Voltage Haro 60 VCollector to Emitter ..
2SC3822 ,Conductor Products, Inc. - BIPOLAR TRANSISSTORS RATINGS AND SPECIFICATIONS
2SC3822 ,Conductor Products, Inc. - BIPOLAR TRANSISSTORS RATINGS AND SPECIFICATIONS
2SK2003-01MR ,N-channel MOS-FETApplications----> Maximum Ratings and Characteristics > Equivalent Circuit-Absolute Maximum Ratings ..
2SK2003-01MR ,N-channel MOS-FET 2SK2003-01MRFAP-IIA Series600V 2,4Ω 40W>
2SK2003-01MR ,N-channel MOS-FETFeatures > Outline Drawing------VGS-Avalanche Proof>
