| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SC3709A-Y |
TOSHIBA|TOSHIBA |
N/a |
60 |
 |
High-Current Switching Applications |
| 2SC3709A-Y |
TOS|TOSHIBA |
N/a |
85 |
|
High-Current Switching Applications |
2SC3709A-Y , High-Current Switching Applications
2SC3710A ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS.2SC3710ATOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)Unit in mm11wr 1:nATT I'nlr. LOW ..
2SC3710A ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS.2SC3710ATOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)Unit in mm11wr 1:nATT I'nlr. LOW ..
2SC3714 , 2SC3714
2SC3714 , 2SC3714
2SK1772 , Silicon N-Channel MOS FET
2SK1792 ,Discrete SemiconductorsThermal CharacteristicsCHARACTERISTIG SYMBOL I MAX. UNITThermal Resistance, Channel lo Case B(clw.) ..
2SK1792 ,Discrete SemiconductorsAbsolute Maximum Ratings (Ta = MC) 3. SOURCECHARACTERISTICDrain-Source VoltageDrain-Gate Voltage (h ..
