| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SC3666-Y |
Toshiba|TOSHIBA |
N/a |
2000 |
 |
|
2SC3668 ,Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching ApplicationsAPPLICATIONS7.1MAX2.7MAX1.00 Low Saturation Voltage : VCE (sat)=0.5V(MaX.)0 High Speed Switching Ti ..
2SC3669 ,Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching ApplicationsAPPLICATIONS7.1MAX2.7MAX1.00 Low Saturation Voltage : VCE (sat)=0.5V(MaX.)0 High Speed Switching Ti ..
2SC3675 ,NPN Triple Diffused Planar Silicon Transistor 900V/100mA High-Voltage Amplifier High-Voltage Switching ApplicationsOrdering number:EN1800ENPN Triple Diffused Planar Silicon Transistor2SC3675900V/100mA High-Voltage ..
2SC3676 ,NPN Triple Diffused Planar Silicon Transistor 900V/300mA High-Voltage Amplifier High-Voltage Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3679 , Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)
2SK1724 ,Very High-Speed Switching ApplicationsAbsolute Maximum Ratings at. Ta = 25°C unitDrain to Source Voltage Voss 30 VGate to Source Voltage ..
2SK1725 ,Very High-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta = 25°C unitDrain to Source Voltage VDSS 30 VGate to Source Voltage V ..
2SK1725 ,Very High-Speed Switching ApplicationsFeatures. Low ON resistance.. Very high-speed switching.. Low-voltage drive.. Meets radial taping.
