| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SC3609 |
TOSHIBA|TOSHIBA |
N/a |
4100 |
 |
|
2SC3611 ,Power DevicePower Transistors2SC3611Silicon NPN epitaxial planar typeFor video amplifierUnit: mm+0.58.0–0.13.2± ..
2SC3615 ,NPN SILICON TRANSISTORELECTRICAL CHARACTERISTICS (Ta = 25 °C)
SYMBOL CHARACTERlSTlC MIN. TYP. MAX. UNIT
DC Current Ga ..
2SC3616 ,NPN SILICON TRANSISTORapplications
requiring High DC Current Gain.
This is suitable for all kind of driving, instead ..
2SC3617 ,NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25 oc)'
CHARACTERISTIC SYMBOL TYP. MAX. UNIT TEST CONDITIONS
..
2SC3617-T1 ,Silicon transistorELECTRICAL CHARACTERISTICS (Ta = 25 oc)'
CHARACTERISTIC SYMBOL TYP. MAX. UNIT TEST CONDITIONS
..
2SK1588-T1 ,N-channel MOS FETDATA SHEET
MOS FIELD EFFECT TRANSISTOR
ZSK1 588
N-CHANNEL MOS FET
FOR SWITCHING
PACKAG ..
2SK1589 ,N-CHANNEL MOS FET FOR SWITCHINGapplications.
Source(S)
(Diode in the figure is the parasitic diode.)
ABSOLUTE MAXIMUM RAT ..
2SK1589-T1B ,MOS field effect transistorELECTRICAL CHARACTERISTICS (Ta = 25 °C)
PARAMETER L SYMBOL . . . TEST CONDITIONS
Drain Cut-of ..
