| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SC3439-T111-1G |
RENESAS |
N/a |
2782 |
 |
|
2SC3440 , HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE
2SC3440 , HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE
2SC3441 , FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE
2SC3443 , High hFE=150 to 800. High collector current (Ic=2A). High collector dissipation Pc=500mW.
2SC3444 , FOR LOW FREQUENCY POWER AMPLFY APPLICATION SILICON NPN EPITAXIAL TYPE
2SK1363 ,Silicon N-Channel MOS Type / High Speed / High Current Switching ApplicationsAbsolute Maximum Ratings (Ta = 25°C)CHARACTERISTIC SYMBOL RATING UNITDrain-Source Voltage VDSS 900 ..
2SK1365 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSII -5 ) Switching Power Supply ApplicationsApplications Unit: mm Low drain−source ON resistance : R = 1.5 Ω (typ.) DS (ON)High forward t ..
2SK1374 ,Small-signal deviceElectrical Characteristics (Ta = 25°C)Parameter Symbol Conditions min typ max UnitDrain to Source c ..
