| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SC3439-T11-1J |
ISAHAYA |
N/a |
2000 |
 |
|
2SC3440 , HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE
2SC3440 , HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE
2SC3441 , FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE
2SC3443 , High hFE=150 to 800. High collector current (Ic=2A). High collector dissipation Pc=500mW.
2SC3444 , FOR LOW FREQUENCY POWER AMPLFY APPLICATION SILICON NPN EPITAXIAL TYPE
2SK1374 ,Small-signal deviceElectrical Characteristics (Ta = 25°C)Parameter Symbol Conditions min typ max UnitDrain to Source c ..
2SK1381 ,TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2-PI-MOSIII) RELAY DRIVE, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONSApplications 4 V gate drive Low drain−source ON resistance : R = 25 mΩ (typ.) DS (ON)High ..
2SK1382 ,TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (L2-PI-MOSIII) RELAY DRIVE, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONSApplications 4 V gate drive Low drain−source ON resistance : R = 15 mΩ (typ.) DS (ON)High ..
