2SC3429 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsApplications Unit: mm Low noise figure 2 NF = 1.5dB, |S | = 16dB (f = 500 MHz) 21e2 NF = 1 ..
2SC3437 ,Transistor Silicon NPN Epitaxial Type (PCT process) Ultra High Speed Switching Applications Computer, Counter Applications2SC3437 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3437 Ultra High Speed Sw ..
2SC3437 ,Transistor Silicon NPN Epitaxial Type (PCT process) Ultra High Speed Switching Applications Computer, Counter ApplicationsApplications High transition frequency: f = 400 MHz (typ.) T Low saturation voltage: V = 0. ..
2SC3438 , FOR HIGH VOLTAGE DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE
2SC3439 , SMALL-SIGNAL TRANSISTOR FOR SMALL TYPE MOTOR PLUGER DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE
2SC3439 , SMALL-SIGNAL TRANSISTOR FOR SMALL TYPE MOTOR PLUGER DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE
2SK1350 , 2SK1350
2SK1350 , 2SK1350
2SK1357 , 2SK1357
2SK1357 , 2SK1357
2SK1358 ,Trans MOSFET N-CH 900V 9A 3-Pin(3+Tab) TO-3PNThermal CharacteristicsCHARACTERISTIC SYMBOL MAX. UNITThermal Resistance, Channel to Case R 0.833
2SC3429
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications
2SC3429 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC3429 VHF~UHF Band Low Noise Amplifier Applications Low noise figure NF = 1.5dB, |S21e|2 = 16dB (f = 500 MHz) NF = 1.7dB, |S21e|2 = 10.5dB (f = 1 GHz)
Maximum Ratings (Ta ��� � 25°C)
Microwave Characteristics (Ta ��� � 25°C) VCE � 10 V, IC � 5 mA, f � 1 GHz
Electrical Characteristics (Ta ��� � 25°C)
VCB � 10 V, IE � 0, f � 1 MHz (Note)
Note: Cre is measured by 3 terminal method with capacitance bridge.
Unit: mm
Weight: 0.012 g (typ.)
