2SC3419 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) MEDIUM POWER AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITomectorcut-ofrcurren ..
2SC3420 ,Silicon NPN Power Transistors TO-126 packageELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-off Cu ..
2SC3420 ,Silicon NPN Power Transistors TO-126 packageAPPLICATIONS).75.8gi3.1 10.1hFE = 70 (Min.) (VCE = 2V, IC = 4A)Low Saturation Voltage: VCE (sat) = ..
2SC3421 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-off Cu ..
2SC3421. ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS2SC3421TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)AUDIO FREQUENCY POWER AMPLIFIER
2SC3422 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHINGELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-off Cu ..
2SK1307 , Silicon N-Channel MOS FET
2SK1307 , Silicon N-Channel MOS FET
2SK1315 , Silicon N-Channel MOS FET
2SK1317 , Silicon N-Channel MOS FET
2SK1317 , Silicon N-Channel MOS FET
2SK1318 , Silicon N Channel MOS FET High Speed Power Switching
2SC3419
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) MEDIUM POWER AMPLIFIER APPLICATIONS
TOSHIBA 2SC3419
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
2SC341l9
MEDIUM POWER AMPLIFIER APPLICATIONS. Unit in mm
8.3MAX.
5.8 gt3.1 10.1
0 Low Saturation Voltage 3% 'r,rr/,'', m,
: VCE (sat)=0.25v (Typ.) (Ic=500mA, IB=50mA) Df?) C "T [ii' I
0 High Collector Power Dissipation : P021.2W (Ta=25°C) ij, 5
0 Complementary to 2SA1356
MAXIMUM RATINGS (Tc=25°C) 0.75A0.15 E
CHARACTERISTIC SYMBOL RATING UNIT .-
Collector-Base Voltage VCBO 40 V 2,310.1
Colleetor-Emitter Voltage VCEO 40 V - w. Q
Emitter-Base Voltage VEBO 5 V a __u' airs tairs is _..---'-----]]?',.
Collector Current IC 800 mA E l. EMITTER
Base Current IB 80 mA e, 2. COLLECTOR
T 25°C 1 2 3. BASE
Collector Power a= .
. . . P -
Dissipation Tc = 25°C C 5 W JEDEC
. JEITA -
J unctlon Temperature Tj 150 T
a TOSHIBA 2-8H1A
Storage Temperature Range Tstg -5r-150 C
Weight : 0.82g (Typ.)
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=40V, IE=0 - - 1.0 PA
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 1.0 ,aA
Collector-Emi; Breakdown - -
Voltage V (BR) CEO IC - lOmA, IB - 0 40 - - V
hFE (1)
V =2V, I =50mA 70 - 240
DC Current Gain (Note) CE C
hFE (2) VCE = 2V, IC = 0.8A 13 60 -
Collector-Emi; Saturation
Voltage VCE (sat) IC - 500mA, IB - 50mA - 0.25 0.8 V
Base-Emitter Voltage VBE VCE = 2V, 10 = 500mA - 0.90 1.1 V
Transition Frequency fT VCE =2V, 1C =0.5A 50 100 - MHz
Collector Output Capacitance Cob VCB = 10V, IE =0, f = IMHz - 10 - pF
(Note) : hFE(1) Classification 0 : 70--140, Y : 120--240
1 2001-11-05
TOSHIBA
C0 LLECTOR CURRENT
VCE (sat) (V)
COLLECTOR—EMITTER SATURATION
VOLTAGE
COLLECTOR POWER DISSIPATION PC
IC - VCE
COMMON EMITTER
Te = 25°C
0 1 2 3 4 5 6
C0LLECT0R-EMITTER VOLTAGE VCE (V)
VCE (sat) - IC
COMMON EMITTER
IC/IB = 10
Te = 100°C
3 10 30 100 300 1000
COLLECTOR CURRENT IC (mA)
C) Tc=Ta INFINITE HEAT SINK
Q) NO HEAT SINK
0 40 80 120 160 200
AMBIENT TEMPERATURE Ta (°C)
DC CURRENT GAIN hFE
COLLECTOR CURRENT 10 (mA)
10 (mA)
COLLECTOR CURRENT
2SC3419
hFE - IC
COMMON EMITTER
VCE = 2V
Te = 100''C
30 100 300 1000
COLLECTOR CURRENT IC (mA)
IC - VBE
COMMON EMITTER
VCE=2V
Te = 100°C 25
0.4 0.6 0.8 1.0 1.2
BASE-EMITTER VOLTAGE VBE (V)
SAFE OPERATING AREA
3000 lllllll Ill ll
IC MAX. (PULSED) yd. 1msir.'f
1000 IC MAX. (CONTINUOUS) ik. \\ l mm X -
\ \ , , l
_ N N 100msh'4
DC OPERATION N
300 Ta=25°C "c, *
w' 'N.
DC OPERATION " ,
Tc=25°C N, N
100 I I I l I I I \
y.f SINGLE NONREPETITIVE N
PULSE Tc=25°C
50 CURVES MUST BE
DERATED LINEARLY WITH
INCREASE IN
TEMPERATURE. VCEO MAX.
3 10 30 100
C0LLECT0RaMITTER VOLTAGE VCE (V)
TOSHIBA 2SC3419
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
3 2001-11-05
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www.loq.com
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