| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SC3417E |
SANYO|SANYO |
N/a |
91478 |
 |
|
2SC3419 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) MEDIUM POWER AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITomectorcut-ofrcurren ..
2SC3420 ,Silicon NPN Power Transistors TO-126 packageELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-off Cu ..
2SC3420 ,Silicon NPN Power Transistors TO-126 packageAPPLICATIONS).75.8gi3.1 10.1hFE = 70 (Min.) (VCE = 2V, IC = 4A)Low Saturation Voltage: VCE (sat) = ..
2SC3421 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-off Cu ..
2SC3421. ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS2SC3421TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)AUDIO FREQUENCY POWER AMPLIFIER
2SK1307 , Silicon N-Channel MOS FET
2SK1307 , Silicon N-Channel MOS FET
2SK1307 , Silicon N-Channel MOS FET
