Partno |
Mfg |
Dc |
Qty |
Available | Descript |
2SC3391B101TZ |
HITACHI |
N/a |
5000 |
|
|
2SC3392 ,NPN Epitaxial Planar Silicon Transistors High-Speed Switching ApplicationsFeatures Package Dimensions · Adoption of FBET process.unit:mm · High breakdown voltage : V =(–)50V ..
2SC3395 ,PNP/NPN Epitaxial Planar Silicon TransistorsSANYO SEMICONDUCTOR CORP BEE D " 7937075 0007332 5 "28A1341, _ T-37-I328C3395 Q -r-3S -/ /PNP/NPN E ..
2SC3395 ,PNP/NPN Epitaxial Planar Silicon TransistorsFeatures. Builtin bias resistor iRe-47ki2. R2=47k§2).. SmaII-sized package (GP).i ): 2SA1341
2SC3396 ,SILICON PNP/NPN EPITAXIAL PLANAR TRANSISTOR FOR SWITCHING APPLICATIONSNo. 12842SAI 342/2503396SILICON PNP/NPN EPITAXIAL PLANAR TRANSISTOR. FOR SWITCHING APPLICATIONS(WIT ..
2SC3397 ,PNP /NPN EPITAXIAL PLANAR SILICON TRANSISTORS
2SK1266 ,Silicon N-channel Power F-MOS FETAbsolute Maximum Ratings (Tc=25°C) upItem Symbol Value Unit 1 2 3 1 G t- 2 a eDrain-source voltage ..
2SK1266 ,Silicon N-channel Power F-MOS FETFeatures I Package Dimensionsq Low ON resistance Rns (on) : R135 (on) 1:0.080 (typ.) Unit: mmq High ..
2SK1271 ,N CHANNEL MOS FIELD EFFECT POWER TRANSISTORapplications.
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1.0t0.2
0.6 d: 0.1
5.45 5.45 ABSOLUTE MAXIMUM RATINGS
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