| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SC3355L-T92-K |
UTC |
N/a |
100000 |
 |
HIGH FREQUENCY LOW NOISE AMPLIFIER |
2SC3356 , Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC= 7 mA, f = 1.0 GHz
2SC3356 NEC, Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC= 7 mA, f = 1.0 GHz
2SC3356 印度产, Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC= 7 mA, f = 1.0 GHz
2SC3356 长电, Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC= 7 mA, f = 1.0 GHz
2SC3356 SanyoNEC, Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC= 7 mA, f = 1.0 GHz
2SC3356 Pb-free NEC
2SC3356 R24 NEC
2SC3356 BF771 infineon
2SC3356 R24 NEC
2SC3356 R25 SK/NEC
2SC3356 R25 NEC
2SC3356(M)-T1B NEC
2SC3356(M)-T1B(R25) NEC
2SC3356(M)-T1B/R25 CHINA
2SC3356(R24) KEXIN
2SC3356/R24/R25 NEC
2SC3356/R25 NEC
2SC3356-A GUOCHAN, NPN Silicon RF Transistor
2SC3356B
2SC3356-F(R25) KEXIN
2SC3356-R22 HITACHI
2SC3356-R24 NEC
2SC3356-R24/R25 NEC
2SC3356-R25 NEC
2SC3356S
2SC3356S NEC
2SC3356-S 蓝箭
2SC3356-T1 NEC
2SC3356-T1(R22) NEC
2SC3356-T1(R23) NEC
2SC3356-T1(R24) NEC
2SC3356-T1(R25) NEC
2SC3355L-T92-K , HIGH FREQUENCY LOW NOISE AMPLIFIER
2SC3356-T1B ,For amplify low noise and high frequencyDATA SHEETDATA SHEETSILICON TRANSISTOR2SC3356MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITA ..
2SC3356-T1B-A , NPN Silicon RF Transistor
2SC3356-T1B-A , NPN Silicon RF Transistor
2SC3356-T2B ,For amplify low noise and high frequencyDATA SHEETDATA SHEETSILICON TRANSISTOR2SC3356MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITA ..
2SK1109 ,N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECMFEATURES• Compact package1. Source• High forward transfer admittance2. Drain3. Gate1000 µ S TYP. (I ..
2SK1117 ,2SK1117
2SK1118 ,N Channel MOS Type(for High Speed/ High Current DC-DC Converter/ Relay Drive and Motor Diver)Thermal CharacteristicsCHARACTERISTIC SYMBOL MAX. UNITThermal Resistance, Channel to Case RM“) 2.77 ..
