2SC3354 ,Small-signal deviceAbsolute Maximum Ratings T = 25°Ca+0.20Parameter Symbol Rating Unit0.45–0.10+0.200.45–0.10(2.5) (2 ..
2SC3355 , NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
2SC3355 , NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
2SC3355 , NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
2SC3355L-T92-K , HIGH FREQUENCY LOW NOISE AMPLIFIER
2SC3356-T1B ,For amplify low noise and high frequencyDATA SHEETDATA SHEETSILICON TRANSISTOR2SC3356MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITA ..
2SK1101. ,N-CHANNEL SILICON POWER MOS-FET213K1101-01MR
FUJI POWER MOS-FET
N-CHANNEL SILICON POWER MOS-FET
I
2SK1101-01MR , N-CHANNEL SILICON POWER MOS-FET
2SK1102 ,N-CHANNEL SILICON POWER MOS-FETFeatures
OHigh speed switching
q Low on-resistance
0N0 secondary breakdown
OLow driving p ..
2SK1102 ,N-CHANNEL SILICON POWER MOS-FET_SK1102-01MR
FUJI
POWER MOS-FET
N-CF ANNEL SILICON POWE
R MOS-FET
I
2SK1109 ,N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECMFEATURES• Compact package1. Source• High forward transfer admittance2. Drain3. Gate1000 µ S TYP. (I ..
2SK1117 ,2SK1117
2SC3354
