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2SC3342#T N/a 28



2SC3345 ,Silicon NPN Power Transistors TO-220 packageFEATURES:. Low Collector Saturation VoitageN'i. VCE(sat)= =0, 4V(Max. ) (at Ic=6A) é. High Speed Sw ..
2SC3346 ,Silicon NPN Power Transistors TO-220C packageSILICON NPN EPITAXIAL TYPE (PCT PROCESS)Unit in mmHIGH CURRENT SWITCHING
2SC3352A ,Power TransistorFeatures , 3 57m“.0 High speed switching0 High collector-base voltage (cho)High Breakdown Voltage, ..
2SC3352A ,Power TransistorAbsolute Maximum Ratings (Tc=25°C) . 3 "ll“ 15max0'5m“__—._—.— '5Item Symbol Value Unit 5, E 7- h 0 ..
2SC3354 ,Small-signal deviceAbsolute Maximum Ratings T = 25°Ca+0.20Parameter Symbol Rating Unit0.45–0.10+0.200.45–0.10(2.5) (2 ..
2SK1096MR ,N-CHANNEL SILICON POWER MOSFET12S_N1_09ti-M2t FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET I
2SK1098M ,N-channel MOS-FETFeatures > Outline Drawing----->
2SK1098M ,N-channel MOS-FETApplications---> Maximum Ratings and Characteristics > Equivalent Circuit-Absolute Maximum Ratings ..
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