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2SC3279TOSN/a1000avaiTransistor Silicon NPN Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications


2SC3279 ,Transistor Silicon NPN Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier ApplicationsApplications Unit: mmMedium Power Amplifier
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2SC3279
Transistor Silicon NPN Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications
2SC3279 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3279

Strobe Flash Applications
Medium Power Amplifier Applications High DC current gain and excellent hFE linearity
: hFE (1) = 140~600 (VCE = 1 V, IC = 0.5 A)
: hFE (2) = 70 (min), 200 (typ.) (VCE = 1 V, IC = 2 A) Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 2 A, IB = 50 mA)
Maximum Ratings (Ta �
�� � 25°C)
VCES 30
Note 1: Pulse width � 10 ms (max), duty cycle � 30% (max)
Electrical Characteristics (Ta �
�� � 25°C)
Note 2: hFE (1) classification L: 140~240, M: 200~330, N: 300~450, P: 420~600
Unit: mm
Weight: 0.21 g (typ.)
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