2SC3265 ,Transistor Silicon NPN Epitaxial Type (PCT process) Low Frequency Power Amplifier Applications Power Switching ApplicationsApplications Unit: mmPower Switching
2SC3265 ,Transistor Silicon NPN Epitaxial Type (PCT process) Low Frequency Power Amplifier Applications Power Switching Applications2SC3265 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3265 Low Frequency Power ..
2SC3265 ,Transistor Silicon NPN Epitaxial Type (PCT process) Low Frequency Power Amplifier Applications Power Switching ApplicationsApplications High DC current gain: h = 100~320 FE (1) Low saturation voltage: V = 0.4 V (ma ..
2SC3265 ,Transistor Silicon NPN Epitaxial Type (PCT process) Low Frequency Power Amplifier Applications Power Switching ApplicationsApplications High DC current gain: h = 100~320 FE (1) Low saturation voltage: V = 0.4 V (ma ..
2SC3266 ,Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching ApplicationsApplications Low saturation voltage: V = 0.5 V (max) (I = 2 A) CE (sat) C Complementary to ..
2SC3267 ,Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching ApplicationsApplications Low saturation voltage: V = 0.5 V (max) @I = 2 A CE (sat) C Complementary to 2 ..
2SJ654 ,High Output MOSFETsAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage ..
2SJ655 ,High Output MOSFETsFeatures• Low ON-resistance.•4V drive.•Ultrahigh-speed switching.•Motor drive, DC / DC converter.Sp ..
2SJ656 ,Switching DeviceAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage ..
2SJ656 ,Switching Device
2SJ657 ,High Output MOSFETsAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage ..
2SJ669 ,Power MOSFET (P-ch single)
2SC3265
Transistor Silicon NPN Epitaxial Type (PCT process) Low Frequency Power Amplifier Applications Power Switching Applications
2SC3265 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3265 Low Frequency Power Amplifier Applications
Power Switching Applications High DC current gain: hFE (1) = 100~320 Low saturation voltage: VCE (sat) = 0.4 V (max) (IC = 500 mA, IB = 20 mA) Complementary to 2SA1298
Maximum Ratings (Ta ��� � 25°C)
Electrical Characteristics (Ta ��� � 25°C)
hFE (1)
(Note)
Note: hFE (1) classification O: 100~200, Y: 160~320
Marking Unit: mm
Weight: 0.012 g (typ.)
