Partno |
Mfg |
Dc |
Qty |
Available | Descript |
2SC3247 |
MITSUBISHI |
N/a |
5435 |
|
FOR RELAY DRIVE POWER SUPPLY APPLICAITON SILICON NPN EPITAXIAL TYPE |
2SC3247 |
MIT |
N/a |
2500 |
|
FOR RELAY DRIVE POWER SUPPLY APPLICAITON SILICON NPN EPITAXIAL TYPE |
2SC3247 , FOR RELAY DRIVE POWER SUPPLY APPLICAITON SILICON NPN EPITAXIAL TYPE
2SC3249 , SMALL-SIGNAL TRANSISTOR FOR SMALL TYPE COLOUR TV CHROMA OUTPUT APLLICATION
2SC3253 ,NPN Epitaxial Planar Silicon Transistors 60V/5A High-Speed Switching ApplicationsOrdering number:ENN1199DPNP/NPN Epitaxial Planar Silicon Transistors2SA1289/2SC325360V/5A High-Spee ..
2SC3255 ,NPN Epitaxial Planar Silicon Transistors 60V/10A High-Speed Switching ApplicationsOrdering number:ENN1201DPNP/NPN Epitaxial Planar Silicon Transistors2SA1291/2SC325560V/10A High-Spe ..
2SC3258 ,Silicon NPN Power Transistors TO-220 packageFEATURES'.. Low Collectbr Saturation Voltaget VCE(sat)=0.4V(Max.) at Ic=3A. High Speed Switching Ti ..
2SJ647 ,P-Channel enhancement MOS FET for load swFEATURES• 2.5 V drive available31• Low on-state resistance RDS(on)1 = 1.45 Ω MAX. (VGS = −4.5 V, ..
2SJ648 ,P-Channel enhancement MOS FET for load swFEATURES 2 1• 2.5 V drive available • Low on-state resistance +0.10.2–0 RDS(on)1 = 1.45 Ω MAX. ( ..
2SJ649 , MOS FIELD EFFECT TRANSISTOR