| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SC3206 |
Toshiba|TOSHIBA |
N/a |
3600 |
 |
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS) |
| 2SC3206 |
|
N/a |
500 |
|
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS) |
2SC3206-Y KEC
2SC3207-K KEC
2SC3206 , SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS)
2SC3209 , NPN SILICON POWER TRANSISTOR
2SC3209 , NPN SILICON POWER TRANSISTOR
2SC3210 ,Power TransistorAbsolute MaXImum Ratings (Tc=25°C) “11 01 I5 45¢ o 3 ——H<—5 0.8max.. i .Collector-base voltage VCBo ..
2SC3225 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE SWITCHING APPLICATIONS SOLENOID DRIVE APPLICATIONSAPPLICATIONS I 2slglf)clfe, I0 High DC Current Gain : hFE = 500 (Min.) (10 = 400 mA)OJSMAX0 Low Sat ..
2SJ604-Z ,Pch power MOSFET 60V RonMAX=30m ohm TO-220AB,TO-262,TO-263ELECTRICAL CHARACTERISTICS (TA = 25°C)CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITZer ..
2SJ605 ,Pch power MOSFET 60V RonMAX=20m ohm TO-220AB,TO-262,TO-263ELECTRICAL CHARACTERISTICS (TA = 25°C)CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITZer ..
2SJ606 ,Pch power MOSFET 60V Ron=15m ohm MAX. TO-220AB,TO-262,TO-263ELECTRICAL CHARACTERISTICS (TA = 25°C)CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITZer ..
