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2SC3199L-GR KEC N/a 55650



2SC3200 , SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS)
2SC3205 , 2SC3229
2SC3206 , SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS)
2SC3206 , SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS)
2SC3209 , NPN SILICON POWER TRANSISTOR
2SJ601 ,Pch power MOSFET 60V RDS(on)1=31m ohm MAX. TO-251(MP-3), TO-252(MP-3Z)ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Z ..
2SJ602 ,Pch power MOSFET 60V RDS(on)MAX=73m ohm TO-220AB,TO-262,TO-263ELECTRICAL CHARACTERISTICS (TA = 25°C)CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITZer ..
2SJ603 ,Pch power MOSFET 60V RDS(on)MAX=48m ohm TO-220AB,TO-262,TO-263ELECTRICAL CHARACTERISTICS (TA = 25°C)CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITZer ..
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