| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SC3199 |
KEC |
N/a |
2000 |
 |
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS) |
2SC3199GR KEC
2SC3199-GR KEC
2SC3199L-GR KEC
2SC3199-Y KEC
2SC3199-Y
2SC32 NEC
2SC320 NEC
2SC3199 , SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS)
2SC3200 , SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS)
2SC3205 , 2SC3229
2SC3206 , SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS)
2SC3206 , SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS)
2SJ600 ,Pch power MOSFET 60V RDS(on)1=50m ohm MAX. MP-3ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Z ..
2SJ601 ,Pch power MOSFET 60V RDS(on)1=31m ohm MAX. TO-251(MP-3), TO-252(MP-3Z)ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Z ..
2SJ602 ,Pch power MOSFET 60V RDS(on)MAX=73m ohm TO-220AB,TO-262,TO-263ELECTRICAL CHARACTERISTICS (TA = 25°C)CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITZer ..
