Partno |
Mfg |
Dc |
Qty |
Available | Descript |
2SC3199-Y |
KEC |
N/a |
898 |
|
|
2SC3199-Y |
|
N/a |
4500 |
|
|
2SC3200 , SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS)
2SC3205 , 2SC3229
2SC3206 , SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS)
2SC3206 , SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS)
2SC3209 , NPN SILICON POWER TRANSISTOR
2SJ601 ,Pch power MOSFET 60V RDS(on)1=31m ohm MAX. TO-251(MP-3), TO-252(MP-3Z)ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Z ..
2SJ602 ,Pch power MOSFET 60V RDS(on)MAX=73m ohm TO-220AB,TO-262,TO-263ELECTRICAL CHARACTERISTICS (TA = 25°C)CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITZer ..
2SJ603 ,Pch power MOSFET 60V RDS(on)MAX=48m ohm TO-220AB,TO-262,TO-263ELECTRICAL CHARACTERISTICS (TA = 25°C)CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITZer ..