| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SC3182N |
TOS|TOSHIBA |
N/a |
123 |
 |
Silicon NPN Power Transistors |
| 2SC3182N |
TOSHIBA|TOSHIBA |
N/a |
7 |
|
Silicon NPN Power Transistors |
2SC3183 ,NPN Triple Diffused Planar Silicon Transistor 800V/0.2A Switching Regulator ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3184 ,NPN Triple Diffused Planar Silicon Transistor 800V/0.5A Switching Regulator ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3187 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC3195 , 2SC3229
2SC3195 , 2SC3229
2SJ598-Z ,P-ch power MOSFET 60V RDS(on)MAX.=130m ohm TO-251, TO-252ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX.UNIT Ze ..
2SJ599 ,Pch power MOSFET 60V RonMAX=75m ohm MP-3ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX.UNIT Ze ..
2SJ599-Z ,Pch power MOSFET 60V RonMAX=75m ohm MP-3FEATURES • Low on-state resistance: RDS(on)1 = 75 mΩ MAX. (VGS = –10 V, ID = –10 A) RDS(on)2 = 1 ..
