| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SC3138-Y |
TOSHIBA|TOSHIBA |
N/a |
11770 |
 |
|
| 2SC3138-Y |
TOS|TOSHIBA |
N/a |
3000 |
|
|
| 2SC3138-Y |
TOSHIBA |
N/a |
3 |
|
|
2SC3142 ,NPN Epitaxial Planar Silicon Transistor High-Frequency General-Purpose Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3143 ,NPN Epitaxial Planar Silicon Transistors High-Voltage Switching, AF Power Amp, 100W Output Predriver ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3144 ,NPN Epitaxial Planar Silicon Darlington Transistors 60V/3A for High-Speed Drivers ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3148 ,Silicon NPN Power Transistors TO-220C packageAPPLICATIONS. I I1nRMAX (£3,6i021Excellent Sw1tch1ng '1'1mes (10:0.8A)1n 1;" I 1n ,MTT? AA -[1,11tr ..
2SC3149 ,NPN Triple Diffused Planar Silicon Transistor 800V/1.5A Switching Regulator ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SJ559 ,P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHINGFEATURES+0.10.2–0• Can be driven by a 2.5 V power source.0.6• Low gate cut-off voltage.0.5 0.50.75 ..
2SJ559-T1 ,Pch enhancement type MOS FETFEATURES+0.10.2–0• Can be driven by a 2.5 V power source.0.6• Low gate cut-off voltage.0.5 0.50.75 ..
2SJ560 ,P-Channel Silicon MOSFET Ultrahigh-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniDV rain-to-Source ..
