IC Phoenix
 
Home ›  2214 > 2SC3098,Transistor Silicon NPN Epitaxial Planar Type UHF~C Band Low Noise Amplifier Applications
2SC3098 Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
2SC3098TOSHIBAN/a8370avaiTransistor Silicon NPN Epitaxial Planar Type UHF~C Band Low Noise Amplifier Applications


2SC3098 ,Transistor Silicon NPN Epitaxial Planar Type UHF~C Band Low Noise Amplifier ApplicationsApplications Unit: mm  Low noise figure 2 NF = 2.5dB, |S | = 14.5dB (f = 500 MHz) 21e2 NF = ..
2SC3099 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsApplications Unit: mm  Low noise figure 2 NF = 1.7dB, |S | = 15dB (f = 500 MHz) 21e2 NF = 2 ..
2SC3110 ,Si NPN Epitaxial PlanarAbsolute Maximum Ratings (Ta=25°C)Item Symbol Value Unit2le 77 .-s'-ztitrdE cho 15 Vc::jpf.cr.:iss, ..
2SC3112 ,Transistor Silicon NPN Epitaxial Type (PCT process) For Audio Amplifier and Switching ApplicationsApplications Unit: mm  High DC current gain h = 600~3600 : FE High breakdown voltage: V = 50 ..
2SC3113 ,Transistor Silicon NPN Epitaxial Type For Audio Amplifier and Switching ApplicationsApplications Unit: mm  High DC current gain h = 600~3600 : FE High breakdown voltage: V = 50 ..
2SC3114 ,NPN Epitaxial Planar Silicon Transistors High-Vebo, AF Amp ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SJ517 , Silicon P Channel MOS FET High Speed Power Switching
2SJ517 , Silicon P Channel MOS FET High Speed Power Switching
2SJ517 , Silicon P Channel MOS FET High Speed Power Switching
2SJ517YYTL-E , Silicon P Channel MOS FET
2SJ518 , Silicon P Channel MOS FET High Speed Power Switching
2SJ518 , Silicon P Channel MOS FET High Speed Power Switching


2SC3098
Transistor Silicon NPN Epitaxial Planar Type UHF~C Band Low Noise Amplifier Applications
2SC3098 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC3098

UHF~C Band Low Noise Amplifier Applications Low noise figure NF = 2.5dB, |S21e|2 = 14.5dB (f = 500 MHz) NF = 3.0dB, |S21e|2 = 9.0dB (f = 1 GHz)
Maximum Ratings (Ta �
�� � 25°C)
Microwave Characteristics (Ta �
�� � 25°C) VCE � 10 V, IC � 5 mA, f � 1 GHz
Electrical Characteristics (Ta �
�� � 25°C)
VCB � 10 V, IE � 0, f � 1 MHz (Note)
Note: Cre is measured by 3-terminal method with capacitance bridge.
Unit: mm
Weight: 0.012 g (typ.)
ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED