Partno |
Mfg |
Dc |
Qty |
Available | Descript |
2SC309 |
MITSUBISHI |
N/a |
25 |
|
|
2SC3098 ,Transistor Silicon NPN Epitaxial Planar Type UHF~C Band Low Noise Amplifier ApplicationsApplications Unit: mm Low noise figure 2 NF = 2.5dB, |S | = 14.5dB (f = 500 MHz) 21e2 NF = ..
2SC3099 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsApplications Unit: mm Low noise figure 2 NF = 1.7dB, |S | = 15dB (f = 500 MHz) 21e2 NF = 2 ..
2SC3110 ,Si NPN Epitaxial PlanarAbsolute Maximum Ratings (Ta=25°C)Item Symbol Value Unit2le 77 .-s'-ztitrdE cho 15 Vc::jpf.cr.:iss, ..
2SC3112 ,Transistor Silicon NPN Epitaxial Type (PCT process) For Audio Amplifier and Switching ApplicationsApplications Unit: mm High DC current gain h = 600~3600 : FE High breakdown voltage: V = 50 ..
2SC3113 ,Transistor Silicon NPN Epitaxial Type For Audio Amplifier and Switching ApplicationsApplications Unit: mm High DC current gain h = 600~3600 : FE High breakdown voltage: V = 50 ..
2SJ517 , Silicon P Channel MOS FET High Speed Power Switching
2SJ517 , Silicon P Channel MOS FET High Speed Power Switching
2SJ517 , Silicon P Channel MOS FET High Speed Power Switching