2SC3072 ,Transistor Silicon NPN Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier ApplicationsApplications High DC current gain : h = 140 to 450 (V = 2 V, I = 0.5 A) FE CE C : h = 70 (mi ..
2SC3073 ,SILICON NPN EPITAXIAL TYPE(PCT PROCESS)FEATURES:. Good Linearity of hFE' Complementary to 2SA1243MAXIMUM RATINGS (ia--25oc)CHARACTERISTICC ..
2SC3074 ,Transistor Silicon NPN Epitaxial Type (PCT process) High Current Switching ApplicationsApplications Unit: mm Low collector saturation voltage: V = 0.4 V (max) (I = 3 A) CE (sat) C ..
2SC3074 ,Transistor Silicon NPN Epitaxial Type (PCT process) High Current Switching Applications2SC3074 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3074 High Current Switch ..
2SC3074-Y , High Current Switching Applications
2SC3074-Y , High Current Switching Applications
2SJ492 ,SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS (TA = 25 °C)CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITDS ..
2SJ493 ,SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS (TA = 25 °C)CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITDS ..
2SJ494 ,SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USEDATA SHEETMOS FIELD EFFECT POWER TRANSISTORS2SJ494SWITCHING P-CHANNEL POWER MOS FET INDUS ..
2SJ495 ,SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USEDATA SHEETMOS FIELD EFFECT POWER TRANSISTORS2SJ495SWITCHING P-CHANNEL POWER MOS FET INDUS ..
2SJ496 , Silicon P-Channel MOS FET High Speed Power Switching
2SJ498 , FIELD-EFFECT TRANSISTOR
2SC3072
Transistor Silicon NPN Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications
2SC3072 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3072 Strobe Flash Applications
Medium Power Amplifier Applications High DC current gain
: hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A)
: hFE = 70 (min) (VCE = 2 V, IC = 4 A) Low collector saturation voltage
: VCE (sat) = 1.0 V (max) (IC = 4 A, IB = 0.1 A) High power dissipation
: PC = 10 W (Tc = 25°C), PC = 1.0 W (Ta = 25°C)
Maximum Ratings (Ta = 25°C) VCES 40
Note 1: Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max)
Unit: mm
Weight: 0.36 g (typ.)
Weight: 0.36 g (typ.)
