| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SC3072-B |
TOSHIBA|TOSHIBA |
N/a |
3000 |
 |
|
| 2SC3072-B |
TOS|TOSHIBA |
N/a |
2000 |
|
|
2SC3073 ,SILICON NPN EPITAXIAL TYPE(PCT PROCESS)FEATURES:. Good Linearity of hFE' Complementary to 2SA1243MAXIMUM RATINGS (ia--25oc)CHARACTERISTICC ..
2SC3074 ,Transistor Silicon NPN Epitaxial Type (PCT process) High Current Switching ApplicationsApplications Unit: mm Low collector saturation voltage: V = 0.4 V (max) (I = 3 A) CE (sat) C ..
2SC3074 ,Transistor Silicon NPN Epitaxial Type (PCT process) High Current Switching Applications2SC3074 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3074 High Current Switch ..
2SC3074-Y , High Current Switching Applications
2SC3074-Y , High Current Switching Applications
2SJ493 ,SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS (TA = 25 °C)CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITDS ..
2SJ494 ,SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USEDATA SHEETMOS FIELD EFFECT POWER TRANSISTORS2SJ494SWITCHING P-CHANNEL POWER MOS FET INDUS ..
2SJ495 ,SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USEDATA SHEETMOS FIELD EFFECT POWER TRANSISTORS2SJ495SWITCHING P-CHANNEL POWER MOS FET INDUS ..
