| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SC3052 |
MITSUBIS |
N/a |
2480 |
 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE |
| 2SC3052 |
DIODES |
N/a |
2480 |
|
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE |
| 2SC3052 |
MITSUBISHI |
N/a |
48800 |
|
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE |
2SC3052/LF MITSUMI
2SC3052-12-1F MITSUBIS
2SC3052EF-T1-LEF Sanyo
2SC3052E-T1-LE MITSUBISHI
2SC3052E-T2 NEC
2SC3052E-T2-LE MITSUMI
2SC3052F-T11-1E(LE) MITSUBISHI
2SC3052F-T1-LF MITSUBISHI
2SC3052-T11(LG) MITSUBISHI
2SC3052-T11-1E(LE) MITSUBISHI
2SC3052-T112 MITSUBIS
2SC3052-T112-1E MIT
2SC3052-T112-1E 三菱
2SC3052-T112-1E ISAHAYA
2SC3052-T112-1E NEC
2SC3052-T112-1F MITSUBISHI
2SC3052-T112-1F MITSUBISH
2SC3052-T112-1F MITSUMI
2SC3052-T112-1F MITSUSHI
2SC3052-T112-1F ISAHAYA
2SC3052-T112-1F
2SC3052-T112-1G SANYO
2SC3052-T112-1G MIT
2SC3052-T112-1G ISAHAYA
2SC3052-T112-1G/LG IEC
2SC3052-T112-2E MITSUBIS
2SC3052-T112-2G MITSUBISHI
2SC3052-T12 MITSUBISHI
2SC3052-T12-1E MITSUMI
2SC3052-T12-1E
2SC3052-T12-1E/LE IEC
2SC3052-T12-1F *
2SC3052-T12-1F MITSUBIS
2SC3052-T12-1F MITSUMI
2SC3052-T12-1F/LF IEC
2SC3052-T12-1G
2SC3052-T12-2F SANYO
2SC3052-T12-2F MITSUBISHI
2SC3052-T143-1F MIT
2SC3052-T150-1F ISAHAYA
2SC3052-T15-1E MITSUBIS
2SC3052-T192-1F MITSUMI
2SC3052-T50-1E MIT
2SC3052-T50-1F MIT
2SC3053/FC MITSUMI
2SC3053/FD MITSUMI
2SC3053C SANYO
2SC3053D SANYO
2SC3053D MITSUBISHI
2SC3053-T11(FD) MITSUBISHI
2SC3053-T112-1C MIT
2SC3053-T112-1C ISAHAYA
2SC3053-T112-1C MITSUBIS
2SC3053-T12-1C MITSUBISHI
2SC3053-T12-1D MITSUBISHI
2SC3053-T12-1D MIT
2SC3053-T122-1D MITSUMI
2SC3053-T122-1D 三菱
2SC3053-T122-1D MIT
2SC3053-T122-D MIT
2SC3053-T12-2F MIT
2SC3053-T18-1D
2SC3054
2SC3055 FUJ, Silicon NPN Power Transistors
2SC3052 , FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
2SC3063 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC3064 ,NPN Epitaxial Planar Silicon CompositeTransistorAbsolute Maximum Ratings at Ta=25°C _ unitCollector to Base Voltage Ircrso 55 IrCellector to Emitte ..
2SC3067 ,NPN Epitaxial Planar Silicon Transistor DIFFERENTIAL AMP APPLICATIONSFeatures. Excellent in thermal equilibrium and suiteddifferential amp.. Low noise.. Matched pair ca ..
2SC3068 ,NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SJ456 ,Ultrahigh-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage ..
2SJ460 ,P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHINGFEATURES
0 Can be driven by a 2.5 V power source.
0 Not necessary to consider driving current b ..
2SJ461 ,P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHINGFEATURES
0 Can be driven by a 2.5 V power source.
0 Not necessary to consider driving current b ..
