2SC3011 ,Transistor Silicon NPN Epitaxial Planar Type UHF~C Band Low Noise Amplifier Applications2SC3011 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3011 UHF~C Band Low Noise Ampli ..
2SC3011 ,Transistor Silicon NPN Epitaxial Planar Type UHF~C Band Low Noise Amplifier ApplicationsApplications Unit: mm 2 High gain: |S | = 12dB (typ.) 21e Low noise figure: NF = 2.3dB (typ.) ..
2SC3030 ,TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON HIGH VOLTAGE HIGH SPEED SWITCHINGApplications
ox4vr>rtAsxI.-' Switching regulators
.ttis%'A%eitet Ultrasonic generators
. 1U5 ..
2SC3039 ,POWER TRANSISTORS(7.0A,400V,50W)Absolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3042 ,NPN Triple Diffused Planar Silicon Transistor 400V/12A Switching Regulator ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3052 , FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
2SJ438 ,TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2-PI-MOSV) RELAY DRIVE, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS
2SJ438 ,TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2-PI-MOSV) RELAY DRIVE, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS
2SJ449 ,SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USEFEATURES3.2 ±0.22.7 ±0.2• Low On-ResistanceRDS(on) = 0.8 Ω MAX. (@ VGS = –10 V, ID = –3.0 A)• Low C ..
2SJ451 , Silicon P-Channel MOS FET
2SJ456 ,Ultrahigh-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage ..
2SJ460 ,P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHINGFEATURES
0 Can be driven by a 2.5 V power source.
0 Not necessary to consider driving current b ..
2SC3011
Transistor Silicon NPN Epitaxial Planar Type UHF~C Band Low Noise Amplifier Applications
2SC3011 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC3011 UHF~C Band Low Noise Amplifier Applications High gain: |S21e|2 = 12dB (typ.) Low noise figure: NF = 2.3dB (typ.), f = 1 GHz High fT: fT = 6.5 GHz
Maximum Ratings (Ta ��� � 25°C)
Microwave Characteristics (Ta ��� � 25°C)
Electrical Characteristics (Ta ��� � 25°C) Cib
Note: Cre is measured by 3-terminal method with capacitance bridge.
Unit: mm
Weight: 0.012 g (typ.)
