Partno |
Mfg |
Dc |
Qty |
Available | Descript |
2SC2996-Y |
TOS|TOSHIBA |
N/a |
1000 |
|
|
2SC2996-Y |
TOSHIBA|TOSHIBA |
N/a |
8770 |
|
|
2SC2999 ,NPN Epitaxial Planar Silicon Transistor HF Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3000 ,NPN Epitaxial Planar Silicon Transistor HF Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3001 , NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)
2SC3011 ,Transistor Silicon NPN Epitaxial Planar Type UHF~C Band Low Noise Amplifier Applications2SC3011 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3011 UHF~C Band Low Noise Ampli ..
2SC3011 ,Transistor Silicon NPN Epitaxial Planar Type UHF~C Band Low Noise Amplifier ApplicationsApplications Unit: mm 2 High gain: |S | = 12dB (typ.) 21e Low noise figure: NF = 2.3dB (typ.) ..
2SJ413 ,P-Channel Silicon MOSFET Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions · Low ON resistance.unit:mm · Ultrahigh-speed switching.2076B · Low-vol ..
2SJ416 ,Ultrahigh-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta = 25°C unitDrain-to-Source Voltage VDSS - 30 VGate-to-Source Voltage ..
2SJ417 ,Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions · Low ON-resistance.unit:mm · Ultrahigh-speed switching.2083B · 4V driv ..