2SC2884 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONSApplications Unit: mm High DC current gain: h = 100 to 320 FE Suitable for output stage of ..
2SC2884 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONS2SC2884 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2884 Audio Frequency Amp ..
2SC2885 ,Silicon transistorDATA SHEETSILICON TRANSISTORS2SC2885, 2946, 2946(1)NPN SILICON EPITAXIAL TRANSISTORFOR HIGH-V ..
2SC2901 ,NPN SILICON TRANSISTORFEATURES 0 High Frequency Current Gain.
0 High Speed Switching.
. Small Output Capacitance.
AB ..
2SC2904 , NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)
2SC2909 ,NPN Epitaxial Planar Silicon Transistors High-Voltage Switching AF 60W Predriver ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SJ355-T1 ,P-channel MOS FET (-30V, +-2A)DATA SHEETMOS FIELD EFFECT TRANSISTOR2SJ355P-CHANNEL MOS FETFOR HIGH SWITCHINGThe 2SJ355 is ..
2SJ355-T1 ,P-channel MOS FET (-30V, +-2A)DATA SHEETMOS FIELD EFFECT TRANSISTOR2SJ355P-CHANNEL MOS FETFOR HIGH SWITCHINGThe 2SJ355 is ..
2SJ356 ,P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHINGDATA SHEETMOS FIELD EFFECT TRANSISTOR2SJ356P-CHANNEL MOS FETFOR HIGH-SPEED SWITCHINGThe 2SJ ..
2SJ356-T2 ,P-channel MOSFETDATA SHEETMOS FIELD EFFECT TRANSISTOR2SJ356P-CHANNEL MOS FETFOR HIGH-SPEED SWITCHINGThe 2SJ ..
2SJ357 ,P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHapplications.ABSOLUTE MAXIMUM RATINGS (TA = +25 °C)Parameter Symbol Conditions Ratings UnitDrain-So ..
2SJ357-T1 ,P-channel MOS FET(-30V, +-3A)applications.ABSOLUTE MAXIMUM RATINGS (TA = +25 °C)Parameter Symbol Conditions Ratings UnitDrain-So ..
2SC2884
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONS
2SC2884 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2884 Audio Frequency Amplifier Applications High DC current gain: hFE = 100 to 320 Suitable for output stage of 1 watts amplifier Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SA1204
Maximum Ratings (Ta = 25°C) Note 1: Mounted on ceramic substrate (250 mm2 × 0.8 t)
Unit: mm
Weight: 0.05 g (typ.)
