Partno |
Mfg |
Dc |
Qty |
Available | Descript |
2SC2884-Y TE12L,C |
TOSHIBA|TOSHIBA |
N/a |
2000 |
|
|
2SC2885 ,Silicon transistorDATA SHEETSILICON TRANSISTORS2SC2885, 2946, 2946(1)NPN SILICON EPITAXIAL TRANSISTORFOR HIGH-V ..
2SC2901 ,NPN SILICON TRANSISTORFEATURES 0 High Frequency Current Gain.
0 High Speed Switching.
. Small Output Capacitance.
AB ..
2SC2904 , NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)
2SC2909 ,NPN Epitaxial Planar Silicon Transistors High-Voltage Switching AF 60W Predriver ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC2910 ,NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Audio 80W Output Predriver ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SJ356-T2 ,P-channel MOSFETDATA SHEETMOS FIELD EFFECT TRANSISTOR2SJ356P-CHANNEL MOS FETFOR HIGH-SPEED SWITCHINGThe 2SJ ..
2SJ357 ,P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHapplications.ABSOLUTE MAXIMUM RATINGS (TA = +25 °C)Parameter Symbol Conditions Ratings UnitDrain-So ..
2SJ357-T1 ,P-channel MOS FET(-30V, +-3A)applications.ABSOLUTE MAXIMUM RATINGS (TA = +25 °C)Parameter Symbol Conditions Ratings UnitDrain-So ..