| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SC2878-B |
TOSHIBA|TOSHIBA |
N/a |
3000 |
 |
For Muting and Switching Applications |
2SC2878-GR TOSHIBA
2SC287A NEC
2SC2880-O ROHM
2SC2880-Y TOSHIBA
2SC2880-Y(AY) TOSHIBA
2SC2880-Y/AY FH/TOS
2SC2878-B , For Muting and Switching Applications
2SC2881 ,Transistor Silicon NPN Epitaxial Type (PCT process) Voltage Amplifier Applications Power Amplifier ApplicationsApplications High voltage: V = 120 V CEO High transition frequency: f = 120 MHz (typ.) T ..
2SC2881 ,Transistor Silicon NPN Epitaxial Type (PCT process) Voltage Amplifier Applications Power Amplifier Applications2SC2881 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2881 Voltage Amplifier
2SC2882 ,Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Voltage Amplifier ApplicationsApplications Suitable for driver of 30 to 35 watts audio amplifier Small flat package P ..
2SC2883 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONSApplications Unit: mm Suitable for output stage of 3 watts amplifier Small flat package ..
2SJ328-Z ,SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS (Ta = 25 °C)
CHARACTERISTIC SYMBOL
.
UNIT TEST CONDITIONS
v
..
2SJ328-Z-E1 ,P-channel enhancement typeELECTRICAL CHARACTERISTICS (Ta = 25 °C)
CHARACTERISTIC SYMBOL
.
UNIT TEST CONDITIONS
v
..
2SJ329 ,SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS (Ta TI' 25 °C)
CHARACTERISTIC SYMBOL “-
Drain to Source On-state Res ..
