| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SC2873-O |
TOSHIBA|TOSHIBA |
N/a |
9500 |
 |
NPN Silicon Epitaxial Transistors |
2SC2873-O(MO) KEXIN
2SC2873-O(TE12R,CF) JRC
2SC2873-V
2SC2873-Y TOSH, NPN Silicon Epitaxial Transistors
2SC2873-Y TOS, NPN Silicon Epitaxial Transistors
2SC2873-Y TOSHIBA, NPN Silicon Epitaxial Transistors
2SC2873-Y 12r TOSHIBA
2SC2873-Y MY Toshiba
2SC2873-Y TE12L,C TOSHIBA
2SC2873-Y(MY) TOSHIBA
2SC2873-Y(T2LTETZF) TOSHIBA
2SC2873-Y(TE12L,C) JRC
2SC2873-Y/MY TOSHIBM
2SC2874 KEC
2SC2873-O , NPN Silicon Epitaxial Transistors
2SC2878 ,Transistor Silicon NPN Epitaxial Type For Muting and Switching Applications2SC2878 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC2878 For Muting and Switching
2SC2878 ,Transistor Silicon NPN Epitaxial Type For Muting and Switching ApplicationsApplications Unit: mm High emitter-base voltage: V = 25 V (min) EBO High reverse h : Reverse ..
2SC2878A , For Muting and Switching Applications
2SC2878-A , For Muting and Switching Applications
2SJ325-Z-E1 ,P-channel enhancement typeFEATURES
C....; q Low On-state Resistance
RDS(on) Tr-' 83' mn TYP. (VGs = -10 V, ID = -2 A)
RD ..
2SJ325-Z-E2 ,P-channel enhancement typeFEATURES
C....; q Low On-state Resistance
RDS(on) Tr-' 83' mn TYP. (VGs = -10 V, ID = -2 A)
RD ..
2SJ325-Z-T2 ,P-channel enhancement typeapplications.
ABSOLUTE MAXIMUM RATINGS (Ta IL".' 25 °C)
Drain to Source Voltage Voss V -30 V
..
