2SC2851 ,Transistors (Selection Guide by Applications and Functions)Wuan-eDem.l Transistors (Selection Guide by
2SC2856 , Silicon NPN Epitaxial
2SC2857 ,NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC2859 ,Transistor Silicon NPN Epitaxial (PCT process) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching ApplicationsApplications Excellent h linearity : h = 25 (min) (V = 6 V, I = 400 mA) FE FE (2) CE C Compl ..
2SC2873 ,Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching ApplicationsApplications Unit: mmPower Switching
2SC2873-O , NPN Silicon Epitaxial Transistors
2SJ317NYTL-E , Silicon P Channel MOS FET
2SJ324 ,SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS (Ta = 25 °C)
PA
Gate to Source Leakage Current less i10 VGS = T16 ..
2SJ324-Z-E1 ,P-channel enhancement typeELECTRICAL CHARACTERISTICS (Ta = 25 °C)
PA
Gate to Source Leakage Current less i10 VGS = T16 ..
2SJ325 ,SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS fr, 'xi its TI l
TEST CONDITIONS .
VGS = ~10 V, ID = -2.0 A
Ws = -4 ..
2SJ325-Z-E1 ,P-channel enhancement typeFEATURES
C....; q Low On-state Resistance
RDS(on) Tr-' 83' mn TYP. (VGs = -10 V, ID = -2 A)
RD ..
2SJ325-Z-E2 ,P-channel enhancement typeFEATURES
C....; q Low On-state Resistance
RDS(on) Tr-' 83' mn TYP. (VGs = -10 V, ID = -2 A)
RD ..
2SC2851
